Samsung
Samsung 970 EVO M.2 2280 500GB PCIe Gen3. X4, NVMe 1.3 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7E500BW
Description:
- The SSD that goes furtherAccelerate into next-gen computing. The Samsung 970 EVO delivers breakthrough speeds, best-in-class reliability, and a broad range of capacity options up to 2TB. The latest V-NAND, new Phoenix controller, and Intelligent TurboWrite technology enhance high-end gaming and 4K & 3D graphic editing.Next level SSD speedFeel the NVMe difference. The 970 EVO transforms high-end gaming and streamlines graphic-intensive workflows with the new Phoenix controller and Intelligent TurboWrite technology. Get stunning sequential read/write speeds of 3,400/2,300 MB/s, up to 32% faster writes than the previous generation.Design FlexibilityThe next advancement in NVMe SSDs. The 970 EVO fits up to 2TB onto the compact M.2 (2280) form factor, greatly expanding storage capacity and saving space for other components. Samsung's innovative technology empowers you with the capacity to do more and accomplish more.Exceptional EnduranceThe new standard in sustainable performance. Get up to 300 TBW, achieving 50 percent higher than the previous generation. The 970 EVO provides exceptional endurance powered by the latest V-NAND technology and Samsung's reputation for quality.Unparalleled ReliabilityAchieve a new level of drive confidence. Samsung's advanced nickel-coated controller and heat spreader on the 970 EVO enable superior heat dissipation. The Dynamic Thermal Guard automatically monitors and maintains optimal operating temperatures to minimize performance drops.Samsung MagicianAdvanced drive management made simple. Samsung Magician software will help you keep an eye on your drive. A suite of user-friendly tools helps keep your drive up to date, monitor drive health and speed, and even boost performance.
Brand | Samsung |
Series | 970 EVO |
Model | MZ-V7E500BW |
Device Type | Internal Solid State Drive (SSD) |
Used For | Consumer |
Form Factor | M.2 2280 |
Capacity | 500GB |
Memory Components | V-NAND 3-bit MLC |
Interface | PCIe Gen3. X4, NVMe 1.3 |
Controller | Samsung Phoenix Controller |
Cache | 512MB LPDDR4 DRAM |
Max Sequential Read | Up to 3400 MBps |
Max Sequential Write | Up to 2300 MBps |
4KB Random Read | QD32: Up to 370,000 IOPSQD1: Up to 15,000 IOPS |
4KB Random Write | QD32: Up to 450,000 IOPSQD1: Up to 50,000 IOPS |
MTBF | 1,500,000 hours |
Power Consumption (Idle) | Max. 30 mW |
Power Consumption (Active) | Average: 5.7W Maximum: 10W (Burst mode) |
Operating Temperature | 0°C ~ +70°C |
Max Shock Resistance | 1,500G & 0.5 ms (Half sine) |
Height | 2.30mm |
Width | 22.10mm |
Depth | 80.26mm |
Weight | 7.94g |
Warranty | 3 Years |
Country Of Origin | China |