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Samsung
Samsung 860 EVO Series M.2 2280 500GB SATA III V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-N6E500BW
| Summary | |
|---|---|
| Form Factor: M.2 2280 | |
| Capacity: 500GB | |
| Interface: SATA III | |
| Max Sequential Read: Up to 550 MBps | |
| Max Sequential Write: Up to 520 MBps | |
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₹4,657Free Delivery
(inclusive of all taxes)
Ships in 1-2 days
3 Years Warranty
7 day replacement
Description:
- AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)S.M.A.R.T. SupportGC (Garbage Collection): Auto Garbage Collection AlgorithmWWN Support: World Wide Name supportedDevice Sleep Mode Support
| Brand | Samsung |
| Series | 860 EVO Series |
| Model | MZ-N6E500BW |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | M.2 2280 |
| Capacity | 500GB |
| Memory Components | V-NAND 3-bit MLC |
| Interface | SATA III |
| Controller | Samsung MJX Controller |
| Cache | Samsung 512MB Low Power DDR4 SDRAM |
| Max Sequential Read | Up to 550 MBps |
| Max Sequential Write | Up to 520 MBps |
| 4KB Random Read | QD1: Up to 10,000 IOPSQD32: Up to 97,000 IOPS |
| 4KB Random Write | QD1: Up to 42,000 IOPSQD32: Up to 88,000 IOPS |
| MTBF | 1,500,000 hours |
| Power Consumption (Idle) | 50 mW |
| Power Consumption (Active) | Average: 2.5WMaximum: 4.0W (Burst mode) |
| Operating Temperature | 0°C ~ +70°C |
| Storage Temperature | -45°C ~ +85°C |
| Operating Humidity | 5% to 95% RH |
| Max Shock Resistance | 1,500G & 0.5 ms (Half sine) |
| Max Vibration Resistance | 20G |
| Height | 2.30mm |
| Width | 22.00mm |
| Depth | 80.00mm |
| Weight | 80.00g |
| Warranty | 3 Years |
| Country Of Origin | China |