Components > Core > Solid State Drive > Samsung 970 EVO PLUS M.2 2280 2TB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7S2T0B/AM

Samsung 970 EVO PLUS M.2 2280 2TB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7S2T0B/AM
Samsung 970 EVO PLUS M.2 2280 2TB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7S2T0B/AM
Samsung 970 EVO PLUS M.2 2280 2TB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7S2T0B/AM
Samsung 970 EVO PLUS M.2 2280 2TB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7S2T0B/AM
Samsung 970 EVO PLUS M.2 2280 2TB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7S2T0B/AM
Samsung 970 EVO PLUS M.2 2280 2TB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7S2T0B/AM
Samsung 970 EVO PLUS M.2 2280 2TB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7S2T0B/AM
Samsung 970 EVO PLUS M.2 2280 2TB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7S2T0B/AM
Samsung 970 EVO PLUS M.2 2280 2TB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7S2T0B/AM
Samsung 970 EVO PLUS M.2 2280 2TB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7S2T0B/AM

Samsung

Samsung 970 EVO PLUS M.2 2280 2TB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7S2T0B/AM

Summary
Form Factor: M.2 2280
Capacity: 2TB
Interface: PCIe Gen 3.0 x4, NVMe 1.3
Max Sequential Read: Up to 3500 MBps
Max Sequential Write: Up to 3300 MBps

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  • 3 Years Warranty

  • 7 day replacement

Description:

  • Reliability: 1200 TBW
BrandSamsung
Series970 EVO PLUS
ModelMZ-V7S2T0B/AM
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity2TB
Memory ComponentsSamsung V-NAND 3-bit MLC
InterfacePCIe Gen 3.0 x4, NVMe 1.3
ControllerSamsung Phoenix Controller
CacheSamsung 1GB Low Power DDR4 SDRAM
Max Sequential ReadUp to 3500 MBps
Max Sequential WriteUp to 3300 MBps
4KB Random Read4KB, QD32: Up to 620,000 IOPS4KB, QD1: Up to 19,000 IOPS
4KB Random Write4KB, QD32: Up to 560,000 IOPS4KB, QD1: Up to 62,000 IOPS
MTBF1,500,000 hours
Power Consumption (Idle)Max. 30 mW
Power Consumption (Active)Average: 6WMaximum: 9W (Burst mode)
Operating Temperature0°C ~ +70°C
Max Shock Resistance1,500G & 0.5 ms (Half sine)
Height2.38mm
Width22.15mm
Depth80.15mm
Weight8.00g
Warranty3 Years
Country Of OriginChina