Components > Core > Solid State Drive > Samsung 970 EVO M.2 2280 2TB PCIe Gen3. X4, NVMe 1.3 64L V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7E2T0BW

Samsung 970 EVO M.2 2280 2TB PCIe Gen3. X4, NVMe 1.3 64L V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7E2T0BW
Samsung 970 EVO M.2 2280 2TB PCIe Gen3. X4, NVMe 1.3 64L V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7E2T0BW
Samsung 970 EVO M.2 2280 2TB PCIe Gen3. X4, NVMe 1.3 64L V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7E2T0BW
Samsung 970 EVO M.2 2280 2TB PCIe Gen3. X4, NVMe 1.3 64L V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7E2T0BW
Samsung 970 EVO M.2 2280 2TB PCIe Gen3. X4, NVMe 1.3 64L V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7E2T0BW
Samsung 970 EVO M.2 2280 2TB PCIe Gen3. X4, NVMe 1.3 64L V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7E2T0BW
Samsung 970 EVO M.2 2280 2TB PCIe Gen3. X4, NVMe 1.3 64L V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7E2T0BW
Samsung 970 EVO M.2 2280 2TB PCIe Gen3. X4, NVMe 1.3 64L V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7E2T0BW
Samsung 970 EVO M.2 2280 2TB PCIe Gen3. X4, NVMe 1.3 64L V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7E2T0BW
Samsung 970 EVO M.2 2280 2TB PCIe Gen3. X4, NVMe 1.3 64L V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7E2T0BW

Samsung

Samsung 970 EVO M.2 2280 2TB PCIe Gen3. X4, NVMe 1.3 64L V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7E2T0BW

Summary
Form Factor: M.2 2280
Capacity: 2TB
Interface: PCIe Gen3. X4, NVMe 1.3
Max Sequential Read: Up to 3500 MBps
Max Sequential Write: Up to 2500 MBps

Ships in 1-2 days


  • 3 Years Warranty

  • 7 day replacement

Description:

    BrandSamsung
    Series970 EVO
    ModelMZ-V7E2T0BW
    Device TypeInternal Solid State Drive (SSD)
    Used ForConsumer
    Form FactorM.2 2280
    Capacity2TB
    Memory Components64L V-NAND MLC
    InterfacePCIe Gen3. X4, NVMe 1.3
    ControllerSamsung Phoenix Controller
    Cache2GB LPDDR4 DRAM
    Max Sequential ReadUp to 3500 MBps
    Max Sequential WriteUp to 2500 MBps
    4KB Random ReadQD32: Up to 500,000 IOPS QD1: Up to 15,000 IOPS
    4KB Random WriteQD32: Up to 480,000 IOPS
    MTBF1,500,000 hours
    Power Consumption (Idle)Max. 30 mW
    Power Consumption (Active)Average: 6W Maximum: 10W (Burst mode)
    Operating Temperature0°C ~ +70°C
    Max Shock Resistance1,500G & 0.5 ms (Half sine)
    Height2.30mm
    Width22.10mm
    Depth80.26mm
    Weight7.94g
    Parts5 Year
    Warranty3 Years
    Country Of OriginChina