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Samsung
Samsung 970 EVO PLUS M.2 2280 250GB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7S250B/AM
Description:
- Reliability: 150 TBW
- Always Evolving SSD: The ultimate in performance, upgraded. Faster than the 970 EVO, the 970 EVO Plus is powered by the latest V-NAND technology and firmware optimization. It maximizes the potential of NVMe bandwidth for unbeatable computing.
- Level up Performance: The 970 EVO Plus reaches sequential read/write speeds up to 3,500/2,300 MB/s, up to 53% faster than the 970 EVO. Powered by the latest V-NAND technology - which brings greater NAND performance and higher power efficiency - along with optimized firmware, a proven Phoenix controller, and Intelligent TurboWrite boost speed.
- Design Flexibility: The next advancement in NVMe SSDs. The 970 EVO Plus fits up to 1TB onto the compact M.2 (2280) form factor, greatly expanding storage capacity and saving space for other components. Samsung's innovative technology empowers you with the capacity to do more and accomplish more.
- Exceptional Endurance: The new standard in sustainable performance. The 970 EVO Plus provides exceptional endurance powered by the latest V-NAND technology and Samsung's reputation for quality.
- Unparalleled Reliability: Achieve a new level of drive confidence. Samsung's advanced nickel-coated controller and heat spreader on the 970 EVO Plus enable superior heat dissipation. The Dynamic Thermal Guard automatically monitors and maintains optimal operating temperatures to minimize performance drops.
- Samsung Magician: Advanced drive management made simple. The Samsung Magician software will help you keep an eye on your drive. A suite of user-friendly tools helps keep your drive up to date, monitor drive health and speed, and even boost performance.
| Brand | Samsung |
| Series | 970 EVO PLUS |
| Model | MZ-V7S250B/AM |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | M.2 2280 |
| Capacity | 250GB |
| Memory Components | V-NAND 3-bit MLC |
| Interface | PCIe Gen 3.0 x4, NVMe 1.3 |
| Controller | Samsung Phoenix |
| Cache | Samsung 512MB Low Power DDR4 SDRAM |
| Max Sequential Read | Up to 3500 MBps |
| Max Sequential Write | Up to 2300 MBps |
| 4KB Random Read | QD32: Up to 250,000 IOPSQD1: Up to 17,000 IOPS |
| 4KB Random Write | QD32: Up to 550,000 IOPSQD1: Up to 60,000 IOPS |
| MTBF | 1,500,000 hours |
| Power Consumption (Idle) | Max. 30 mW |
| Power Consumption (Active) | Average: 5WMaximum: 8W (Burst mode) |
| Operating Temperature | 0°C ~ +70°C |
| Max Shock Resistance | 1,500G & 0.5 ms (Half sine) |
| Height | 2.38mm |
| Width | 22.15mm |
| Depth | 80.15mm |
| Weight | 8.00g |
| Warranty | 3 Years |
| Country Of Origin | China |