Components > Core > Solid State Drive > Samsung 960 EVO M.2 1TB NVMe PCI-Express 3.0 x4 Internal Solid State Drive (SSD) MZ-V6E1T0BW

Samsung 960 EVO M.2 1TB NVMe PCI-Express 3.0 x4 Internal Solid State Drive (SSD) MZ-V6E1T0BW
Samsung 960 EVO M.2 1TB NVMe PCI-Express 3.0 x4 Internal Solid State Drive (SSD) MZ-V6E1T0BW
Samsung 960 EVO M.2 1TB NVMe PCI-Express 3.0 x4 Internal Solid State Drive (SSD) MZ-V6E1T0BW
Samsung 960 EVO M.2 1TB NVMe PCI-Express 3.0 x4 Internal Solid State Drive (SSD) MZ-V6E1T0BW

Samsung

Samsung 960 EVO M.2 1TB NVMe PCI-Express 3.0 x4 Internal Solid State Drive (SSD) MZ-V6E1T0BW

Summary
Form Factor: M.2 2280
Capacity: 1TB
Interface: PCI-Express 3.0 x4
Max Sequential Read: Up to 3200 MBps
Max Sequential Write: Up to 1900 MBps

Ships in 1-2 days


  • 3 Years Warranty

  • 7 day replacement

Description:

  • TRIM Support: TRIM SupportedS.M.A.R.T Support: S.M.A.R.T SupportedGC (Garbage Collection): Auto Garbage Collection AlgorithmEncryption Support: AES 256-bit for User Data EncryptionTCG Opal Family Spec and eDrive (IEEE1667) to be supported by FW updateDevice Sleep Mode Support: 5mW (L1.2)
BrandSamsung
Series960 EVO
ModelMZ-V6E1T0BW
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity1TB
Memory Components3D NAND
InterfacePCI-Express 3.0 x4
ControllerSamsung Polaris controller
Cache1024MB
Max Sequential ReadUp to 3200 MBps
Max Sequential WriteUp to 1900 MBps
4KB Random ReadUp to 380,000 IOPS (4KB, QD32)Up to 14,000 IOPS (4KB, QD1)
4KB Random WriteUp to 360,000 IOPS (4KB, QD32)Up to 50,000 IOPS (4KB, QD1)
MTBF1,500,000 hours
Power Consumption (Idle)1.2W
Power Consumption (Active)5.7W
Operating Temperature0°C ~ +70°C
Max Shock Resistance1500G, duration 0.5m sec, 3 axis
Height2.38mm
Width22.15mm
Depth80.15mm
Weight8.20g
Warranty3 Years
Country Of OriginChina